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DDR4 SDRAM
Axeme - Hwaling Technology Co., Ltd. designs best in class DDR4 SDRAM and provides manufacturing services for DDR4 SDRAM 16Gb, DDR4 SDRAM 8Gb and DDR4 SDRAM 4Gb with high engineering content. Keeping in mind the importance of clients' time, we make sure that our products are delivered to them within the promises time-period. Axeme - Hwaling Technology Co., Ltd.’s innovative technology and designs paralleled with our excellent customer service have propelled us to become one of the leading providers of DDR4 SDRAM today. For more details of how to get in touch with our sales coordinator, please go to Contact Us. We look forward to hearing from you soon.
| Item No. | Product Name | Density | Organization | Voltage | Package | File Download |
| H2A904G08A6C | DDR4 SDRAM | 4Gb | 512Mb x 8 | 1.2V | FBGA-78 | |
| H2A904G08A6O | DDR4 SDRAM | 4Gb | 512Mb x 8 | 1.2V | FBGA-78 | |
| H2A904G16A6C | DDR4 SDRAM | 4Gb | 256Mb x 16 | 1.2V | FBGA-96 | |
| H2A908G08A6C | DDR4 SDRAM | 8Gb | 1024Mb x 8 | 1.2V | FBGA-78 | |
| H2A908G08A6O | DDR4 SDRAM | 8Gb | 1024Mb x 8 | 1.2V | FBGA-78 | |
| H2A908G16A6C | DDR4 SDRAM | 8Gb | 512Mb x 16 | 1.2V | FBGA-96 | |
| H2A908G16A6J | DDR4 SDRAM | 8Gb | 512Mb x 16 | 1.2V | FBGA-96 | |
| H2A908G16A6O | DDR4 SDRAM | 8Gb | 512Mb x 16 | 1.2V | FBGA-96 | |
| H2A916G16A6C | DDR4 SDRAM | 16Gb | 1024Mb x 16 | 1.2V | FBGA-96 |
H2A904G08A6C
4Gb (32Mx16Banks×8) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks, 2 bank group with 4 banks for each bankgroup for x8 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
H2A904G08A6O
4Gb (32Mx16Banks×8) DDR4 SDRAM
The 4Gb DDR4 SDRAM is organized as 32Mbit x8 I/Os x 16banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2400Mb/sec/ pin (DDR4-2400) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 4Gb DDR4 device is available in 78ball FBGAs.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 4Gb DDR4 device is available in 78ball FBGAs.
H2A904G16A6C
4Gb (32Mx8Banks×16) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
H2A908G08A6C
8Gb (64Mx16Banks×8) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x8 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
H2A908G08A6O
8Gb (64Mx16Banks×8) DDR4 SDRAM
The 8Gb DDR4 SDRAM is organized as 64Mbit x8 I/Os x 16banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/ pin (DDR4-3200) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
H2A908G16A6C
8Gb (64Mx8Banks×16) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
H2A908G16A6J
8Gb (64Mx8Banks×16) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
H2A908G16A6O
8Gb (62Mx8Banks×16) DDR4 SDRAM
The 8Gb DDR4 SDRAM is organized as 64Mbit x16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/ pin (DDR4-3200) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V)VDDQ and 2.5V(2.375V~2.75V)VPP. The 8Gb DDR4 device is available in 96ball FBGAs.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V)VDDQ and 2.5V(2.375V~2.75V)VPP. The 8Gb DDR4 device is available in 96ball FBGAs.
H2A916G16A6C
16Gb (128Mx8Banks×16) DDR4 SDRAM
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
Axeme - Hwaling Technology Co., Ltd. offers a comprehensive range of DDR4 SDRAM, catering to diverse memory needs in modern computing. Our DDR4 SDRAM modules are available in various capacities, including DDR4 SDRAM 4Gb, DDR4 SDRAM 8Gb, and DDR4 SDRAM 16Gb, ensuring high performance and efficiency for both consumer and enterprise applications. These modules are designed to deliver superior speed and reliability, making them the ultimate choice for upgrading your system's memory. Whether you're seeking DDR4 SDRAM for everyday use or high-demand environments, our products provide the perfect solution to meet your requirements. Explore our offerings to find the ideal DDR4 SDRAM module for your needs.
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