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DDR4 SDRAM Manufacturer
DDR3 SDRAM is being widely used today by businesses as a way to make DDR3 SDRAM can do a variety of other functions depending on what specific needs the business requires. To ensure that the requirements of this policy are met, Axeme - Hwaling Technology Co., Ltd. will keep providing and maintaining safe and healthy working conditions, equipment and systems of work, together with adequate information, instruction, training and supervision for all employees.
H2A908G08A6O
8Gb (64Mx16Banks×8) DDR4 SDRAM
The 8Gb DDR4 SDRAM is organized as 64Mbit x8 I/Os x 16banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/ pin (DDR4-3200) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
The chip is designed to comply with the following key DDR4 SDRAM fea-tures such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of exter-nally supplied differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-ion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.
The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V). The 8Gb DDR4 device is available in 78ball FBGAs.
Features :
- JEDEC standard 1.2V (1.14V~1.26V)
- VDDQ = 1.2V (1.14V~1.26V)
- 8-bit pre-fetch
- 16 internal banks (x8): 4 groups of 4 banks each
- Programmable CAS Latency (posted CAS): 10,11,12,13,14,15,16,17,18,19,20,22,24
- Programmable Additive Latency: 0, CL-2 or CL-1 clock
- Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
- Bi-directional Differential Data-Strobe
- Internal (self) calibration: calibration through ZQ pin (RZQ: 240 ohm ± 1%)
- On Die Termination using ODT pin
- Connectivity Test Mode (TEN) is Supported
- Asynchronous Reset
- CRC for Read/Write data security
- Command address parity check
- DBI (Data Bus Inversion)
- Gear down mode
- POD (Pseudo Open Drain) interface for data input/output
- Internal VREF for data inputs
- External VPP for DRAM Activating Power
- PPR and sPPR is supported
As a result of its commitment to R&D, manufacturing and quality control, Axeme - Hwaling Technology Co., Ltd. engineers reliable and long-lasting solutions as a partner for continuous improvement. With extensive expertise in engineering and product design, Axeme - Hwaling Technology Co., Ltd. able to offer value-added products to our customers. We review our offerings regularly to make sure our prices are competitive, if not the lowest available. For more details about our DDR3 SDRAM, please contact with us immediately.