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Axeme - Hwaling Technology Co., Ltd. ensures all of our parallel NAND flash, parallel flash memory are affordable and priced competitively with other similar products on the market. We promise that our service is second to none! Every person who purchases a product from Axeme - Hwaling Technology Co., Ltd. will have access to our service department when it is needed. In addition, we specialize in servicing the flash products needs of businesses locally and across the country. Our quality controllers perform a variety of quality processes in the entire production process in order to ascertain that only high-quality products are delivered at clients'end.
| Item No. | Product Name | Density | Voltage | Package | File Download |
|---|---|---|---|---|---|
| H7A11G21F1CX | Parallel NAND Flash | 1Gb | 3.3V | TSOP-48 12x20mm |  |
| H7A11G24B9CN | Parallel NAND Flash | 1Gb | 3.3V | VFBGA-48 6.5x8mm | |
| H7A11G64B9CN | Parallel NAND Flash | 1Gb | 1.8V | VFBGA-48 6.5x8mm,1.8V_X8 bus | |
| H7A11G24B5CH | Parallel NAND Flash | 1Gb | 3.3V | VFBGA-63 (9*11) | |
| H7A11G21B1CH | Parallel NAND Flash | 1Gb | 3.3V | TSOP-48 12x20mm | |
| H7A12G24B5CN | Parallel NAND Flash | 2Gb | 3.3V | VFBGA-63 (9*11) | |
| H7A12G21B1CN | Parallel NAND Flash | 2Gb | 3.3V | TSOP-48 12x20mm | |
| H7A12G54B5CN | Parallel NAND Flash | 2Gb | 1.8V | VFBGA-63 (9*11), 1.8V_X16 bus | |
| H7A14G21F1CX | Parallel NAND Flash | 4Gb | 3.3V | TSOP-48 12x20mm | |
| H7A14G21B1CN | Parallel NAND Flash | 4Gb | 3.3V | TSOP-48 12x20mm | |
| H7A14G21A1CX | Parallel NAND Flash | 4Gb | 3.3V | TSOP-48 12x20mm | |
H7A11G21F1CX
1G-Bit 3.3V NAND FLASH MEMORY
Offered in 128Mx8bit, the H7A11G21F1CX is a 1G-bit NAND Flash Memory with spare 32M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A11G21F1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A11G21F1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility.
H7A11G24B9CN
1G-Bit 3.3V NAND FLASH MEMORY
The H7A11G24B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A11G64B9CN
1G-Bit 1.8V NAND FLASH MEMORY
The H7A11G64B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G64B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G64B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A11G24B5CH
1G-Bit 3.3V NAND FLASH MEMORY
The H7A11G24B5CH (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B5CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B5CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A11G21B1CH
1G-Bit 3.3V NAND FLASH MEMORY
The H7A11G21B1CH (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G21B1CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G21B1CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A12G24B5CN
2G-Bit 3.3V NAND FLASH MEMORY
The H7A12G24B5CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G24B5CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G24B5CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A12G21B1CN
2G-Bit 3.3V NAND FLASH MEMORY
The H7A12G21B1CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G21B1CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G21B1CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A12G54B5CN
2G-Bit 1.8V NAND FLASH MEMORY
The H7A12G54B5CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 13mA at 1.8V and 10uA for CMOS standby current.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G54B5CN supports the standard NAND flash memory interface using the multiplexed 16-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G54B5CN supports the standard NAND flash memory interface using the multiplexed 16-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A14G21F1CX
4G-Bit 3.3V NAND FLASH MEMORY
Offered in 512Mx8bit, the H7A14G21F1CX is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A14G21F1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A14G21F1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility.
H7A14G21B1CN
4G-Bit 3.3V NAND FLASH MEMORY
The H7A14G21B1CN (4G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.
The memory array totals 553,648,128 bytes, and organized into 4,096 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each.
Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area(The spare area is typically used for error management functions). The H7A14G21B1CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
The memory array totals 553,648,128 bytes, and organized into 4,096 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each.
Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area(The spare area is typically used for error management functions). The H7A14G21B1CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.
The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
H7A14G21A1CX
4G-Bit 3.3V NAND FLASH MEMORY
Offered in 512Mx8bit, the H7A14G21A1CX is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A14G21A1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility..
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A14G21A1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility..
With our quality standardized and customized products like our parallel NAND flash, we have earned a huge client base, spread all across the globe. For nearly 20 years it has been our passion and our mission to create products that make people’s lives better, easier and more fulfilling. Moreover, our flash products have always been known for quality, reliability and solid performance, making Axeme - Hwaling Technology Co., Ltd. becomes the most specified brand in the parallel flash memory business. Contact us today to find out more about our manufacturing capabilities and our extensive range of flash products options.