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Parallel NAND Flash Memory
Over the years, Axeme - Hwaling Technology Co., Ltd. achieved continuous growth by closely observing the market in order to produce customer-oriented products. Our 1G-Bit 1.8V NAND FLASH MEMORY is made to the same rigorous quality standards that our commercial customers demand. With the help of 1G-Bit 1.8V NAND FLASH MEMORY, you can easily manage and track your business. Our aim is to create a strong base for the consumers and suppliers in Taiwan and abroad, through which, a perfect chain of demand and supply can be maintained. Our company is a professional manufacturer of 1G-Bit 1.8V NAND FLASH MEMORY, providing FLASH IC, Parallel NAND Flash with top quality.
H7A12G21G1IX
1G-Bit 1.8V NAND FLASH MEMORY
The H7A12G21G1IX is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).
The H7A12G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The H7A12G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features :
- Single Level per Cell (SLC) Technology
- ECC requirement: 8bit/ 544Bytes
- Power Supply Voltage
- Voltage range: 2.7V ~ 3.6V - Organization
- Page size: x8 (2048 + 128) bytes; 128- bytes spare area
- Block size: x8 (128k + 8k) bytes
- Plane size: 1024 Blocks per Plane
- 2008 block (min) ~ 2048 block (max) - Modes
– Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
– Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Access time
– Cell array to register: 25μs (max)
– Serial Read Cycle: 25 ns (min) (CL=50pF) - Program/ Erase time
– Auto Page Program: 300 μs /page (typ.)
– Auto Block Erase: 3.5 ms /block (typ.) - Reliability
– 10 Year Data retention (Typ)
Our products have always been known for quality, reliability and solid performance, making Axeme - Hwaling Technology Co., Ltd. becomes the most specified brand in the 1G-Bit 1.8V NAND FLASH MEMORY business. We can manufacture 1G-Bit 1.8V NAND FLASH MEMORY that meets specific technical requirements. If you are looking for FLASH IC, Parallel NAND Flash, you are in the right place. At Axeme - Hwaling Technology Co., Ltd., you will find every kind of 1G-Bit 1.8V NAND FLASH MEMORY that you can think of, with something for all kind of business.