Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

Parallel Flash Memory Supplier in Taiwan

Axeme - Hwaling Technology Co., Ltd.’s mission, as a worldwide flash memory supplier, is to make its key technologies available to its final customers at an affordable price, by matching high quality and a competitive offer, technology and flexibility. Since 1998, Axeme - Hwaling Technology Co., Ltd. has provided the parallel flash memory with innovative designs, reliable manufacturing, high-quality standards, competitive pricing and low life-cycle costs. If you are looking for parallel NAND flash, please do not hesitate to inform us.

H7A11G21G1IX

1G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A11G21G1IX is a single 3.3v 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A11G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features :

  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/ 512Bytes
  • Power Supply Voltage
    - Voltage range: 2.7V ~ 3.6V
  • Organization
    - Page size: x8 (2048 + 128) bytes; 128- bytes spare area
    - Block size: x8 (128k + 8k) bytes
    - 1004 block (min) ~ 1024 block (max)
  • Modes
    – Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Access time
    – Cell array to register: 25μs (max)
    – Serial Read Cycle: 25 ns (min) (CL=50pF)
  • Program/ Erase time
    – Auto Page Program: 300 μs /page (typ.)
    – Auto Block Erase: 2.5 ms /block (typ.)
  • Reliability
    – 10 Year Data retention (Typ)

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Axeme - Hwaling Technology Co., Ltd. is your leading industry resource for manufacturers and product information on the parallel flash memory, parallel NAND flash. Going forward, our company will continue to develop smaller, lower power consumption devices and solutions that maximize performance and bring added value. We guarantee the quality of our products, since we deal only with authorized and reliable flash memory supplier, and our parallel flash memory you buy from us will fit your needs perfectly.