Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

MLC NAND Flash

MLC NAND Flash can do a variety of other functions depending on what specific needs the business requires. We believe that our MLC NAND Flash have very great potential for this type of development in Hardware & Metal Products industry.
Item No. Product Name Density Voltage Package File Download
H7A2AG21C1CX MLC Nand Flash 16Gb 3.3V TSOP48 12x20mm H7A2AG21C1CX_NAND FLASH MEMORY (710 KB)
H7A2BG21C1CX MLC Nand Flash 32Gb 3.3V TSOP48 12x20mm H7A2BG21C1CX_NAND FLASH MEMORY (510 KB)
H7A2CG21C1CX MLC Nand Flash 64Gb 3.3V TSOP48 12x20mm H7A2CG21C1CX_NAND FLASH MEMORY (513 KB)
H7A2DG21C1CX MLC Nand Flash 128Gb 3.3V TSOP48 12x20mm H7A2DG21C1CX_NAND FLASH MEMORY (512 KB)
H7A2EG21C1CX MLC Nand Flash 256Gb 3.3V TSOP48 12x20mm H7A2EG21C1CX_NAND FLASH MEMORY (512 KB)

H7A2AG21C1CX

16G-Bit 3.3V NAND FLASH MEMORY

The H7A2AG21C1CX (16G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2AG21C1CX (16G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).

H7A2BG21C1CX

32G-Bit 3.3V NAND FLASH MEMORY

The H7A2BG21C1CX (32G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2BG21C1CX (32G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI

H7A2CG21C1CX

64G-Bit 3.3V NAND FLASH MEMORY

The H7A2CG21C1CX (64G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2CG21C1CX (64G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).

H7A2DG21C1CX

128G-Bit 3.3V NAND FLASH MEMORY

The H7A2DG21C1CX (128G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2DG21C1CX (128G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).

H7A2EG21C1CX

256G-Bit 3.3V NAND FLASH MEMORY

The H7A2EG21C1CX (256G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2EG21C1CX (256G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).
Axeme - Hwaling Technology Co., Ltd., the world’s leading manufacturer of MLC NAND Flash, is positioned at the leading edge of innovation and service, providing the most comprehensive FLASH IC solutions packages to its customers via a portfolio of highly recognized brands. If you are looking for MLC NAND Flash manufacturing company, let us be your answer.