Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

data storage Parallel NAND Memory

Axeme - Hwaling Technology Co., Ltd. strives to research and develop quality, energy-efficient 4G-Bit 3.3V PARALLEL SLC-NAND FLASH to benefit the hardware & metal products consumers. As a leading supplier of 4G-Bit 3.3V PARALLEL SLC-NAND FLASH, we provide professional FLASH IC, Parallel NAND Flash. Axeme - Hwaling Technology Co., Ltd.'s team is second to none. Our knowledge, energy, and passion ensure you achieve the best possible outcome for your customers. Contact the Axeme - Hwaling Technology Co., Ltd. Support Team directly, in case you have questions about 4G-Bit 3.3V PARALLEL SLC-NAND FLASH. They will provide specific advice in choosing the system that meets the technical specifications and approvals to give the most cost-effective solution for you.

H7A14G24G6IX

4G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A14G24G6IX is a single 3.3v 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

The H7A14G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features :

  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/ 544Bytes
  • Power Supply Voltage
    - Voltage range: 2.7V ~ 3.6V
  • Organization
    - Page size: x8 (4096 + 256) bytes; 256- bytes spare area
    - Block size: x8 (256k + 16k) bytes
    - Plane size: 2048 Blocks per Plane or (256M + 16M) bytes
  • Modes
    – Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
    – Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
  • Page Read/ Program
    – Random access: 25 μs (Max)
    – Sequential access: 25 ns (Min)
    – Program time/ Multiplane Program time: 300 μs (Typ)
  • Block Erase
    – Block Erase time: 3.5 ms (Typ)
  • Reliability
    – 10 Year Data retention (Typ)
    – Blocks zero are valid

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Axeme - Hwaling Technology Co., Ltd. is recognized by our customers as the best provider of 4G-Bit 3.3V PARALLEL SLC-NAND FLASH throughout the world. We offer 4G-Bit 3.3V PARALLEL SLC-NAND FLASH with high quality and competitive price. As an industry leader of 4G-Bit 3.3V PARALLEL SLC-NAND FLASH, our products have a reputation for quality. If you need any assistance in selecting your 4G-Bit 3.3V PARALLEL SLC-NAND FLASH or have any other questions, don't hesitate to phone, fax, or e-mail us.