H7A11G24G6IX
1G-Bit 3.3V PARALLEL SLC-NAND FLASH
The H7A11G24G6IX is a single 3.3v 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).
The H7A11G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
The H7A11G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Features
- Single Level per Cell (SLC) Technology
- ECC requirement: 8bit/ 512Bytes
- Power Supply Voltage
- Voltage range: 2.7V ~ 3.6V - Organization
- Page size: x8 (2048 + 128) bytes; 128- bytes spare area
- Block size: x8 (128k + 8k) bytes
- 1004 block (min) ~ 1024 block (max) - Modes
– Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy - Access time
– Cell array to register: 25μs (max)
– Serial Read Cycle: 25 ns (min) (CL=50pF) - Program/ Erase time
– Auto Page Program: 300 μs /page (typ.)
– Auto Block Erase: 2.5 ms /block (typ.) - Reliability
– 10 Year Data retention (Typ)
