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Axeme - Hwaling Technology Co., Ltd.

DDR3 SDRAM Manufacturer

Axeme - Hwaling Technology Co., Ltd. has a diversified product range to serve multiple industries, with DDR3 SDRAM, DRAM IC industry being the main industry served. Our products are highly demanded by our clients across the country for optimum quality. In order to ensure longer service life and reliability, our products are manufactured by our vendors using the best quality raw material and latest technology. Also, DDR3 SDRAM, DRAM IC are our main products, featuring its high quality and a wide range of applications.
Categories > DRAM IC > DDR3 SDRAM

H2A408G3286A

8Gb (32Mx8Banks×32) DDR3 SDRAM

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The H2A408G3286A is a high speed stack multi-chip package integrated 4Gbits x2 DDR3 SDRAM and fabricated with ultra high performance CMOS process containing 8G bits which organized as 32Mbits x 8 banks by 32 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
The 8Gb DDR3 devices operates with a single power supply: 1.35V ±1.35V -0.065/+0.1V or 1.5V ± 0.075V VDD and VDDQ.
Features :

  • VDD/VDDQ = 1.35V -0.065/+0.1V.
  • Backward compatible to VDD = VDDQ = 1.5V ±0.075V.Supports DDR3 devices to be backward compatible in 1.5V applications.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5,6,7,8
  • CAS Latency(CL): 5,6,7,8,9,10,11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT)options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval:7.8us Tcasebetween 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength:RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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Axeme - Hwaling Technology Co., Ltd. is committed to our long-term strategy of continuously releasing innovative DDR3 SDRAM, DRAM ICand offering intelligent hardware & metal products solutions in a global market together with our partners. We invite you to kindly have a look at our vast products range and we are sure that you will find more than one reason & component which will give us this opportunity to get associated with you and provide you with best of our services. If you are looking for cheap DDR3 SDRAM, DRAM IC, Axeme - Hwaling Technology Co., Ltd. has something to suit your needs.