16Gb (64Mx8Banks×32) Low Power DDR4 SDRAM, H2AB16G32E6R
16Gb (64Mx8Banks×32) Low Power DDR4 SDRAM
of a single 8n-bit wide, one clock cycle data transfer at the internal SDRAM core and eight corresponding n-bit wide,one-half-clock-cycle data transfer at the I/O pins. Read and write accesses to the H2AB16G32E6R are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
For H2AB16G32E6R devices, accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Active command are used to select the row and the Bank to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank and the starting column location for the burst
Single Low: -30°C to 85°C
Commercial: 0°C to 85°C