Home / Product Line
128Mb (1M×4Banks×32) Synchronous DRAM, H2A11283233B
Axeme - Hwaling Technology Co., Ltd.'s mission, as a worldwide 128Mb (1M×4Banks×32) Synchronous DRAM supplier, is to make its key technologies available to its final customers at an affordable price, by matching high quality. As an industry leader of 128Mb (1M×4Banks×32) Synchronous DRAM, we can manufacture first-rate H2A11283233B, 128Mb (1M×4Banks×32) Synchronous DRAM with reasonable price. Our prime focus is to deliver products that exceed the expectations of our clients in a cost-effective manner. If you need any help at choosing the right 128Mb (1M×4Banks×32) Synchronous DRAM to match your requirements, we are happy to quote tailored to your requirements.
H2A11283233B
128Mb (1M×4Banks×32) Synchronous DRAM
The H2A11283233B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 1Meg words x 4 banks by 32 bits. All inputs and outputs are synchronized with the positive edge of the clock.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
Features :
- 1,048,576 Words × 4 banks × 32 bits organization
- Single 3.3V±0.3V Power Supply
- Self Refresh Mode
- CAS Latency: 2 and 3
- Burst Length: 1, 2, 4, 8 and full page
- Burst Read, Single Writes Mode
- Byte Data Controlled by DQM
- Auto-precharge and Controlled Precharge
- 4K Refresh cycles / 64 mS
- Interface: LVTTL
- Packaged in TSOP II 86 pin, 400 mil – 0.50
- Using Lead free materials with RoHS compliant
Axeme - Hwaling Technology Co., Ltd. is recognized by our customers as the best provider of 128Mb (1M×4Banks×32) Synchronous DRAM throughout the world. Your complete satisfaction is our ultimate goal. We invite you to look at our Web site and you will find us to be a reliable source for your needs. We will establish long-term co-operation and growth together with your business. Axeme - Hwaling Technology Co., Ltd. aims to design and build the world's best performing 128Mb (1M×4Banks×32) Synchronous DRAM, creating the perfect products and services for every type of customer. For more details about our H2A11283233B, 128Mb (1M×4Banks×32) Synchronous DRAM, please contact with us immediately.