4Gb (64Mx8Banks×8) DDR3 SDRAM

The H2A404G0866C is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 4,294,967,296 bits which organized as 64Mbits x 8 banks by 8 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:

1. posted CAS with additive latency,
2. write latency = read latency -1,
3. On Die Termination,
4. programmable driver strength data,
5. seamless BL4 access with bank-grouping.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 4Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Available package: FBGA-78Ball (with 0.8mm x 0.8mm ball pitch)