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H2A301G1656B

1Gb (8Mx8Banksx16) DDR2 SDRAM

The H2A301G1656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
  4. normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR2 device operates with a single power supply: 1.8V ± 0.1V VDD and VDDQ. Available package: TFBGA-84Ball (with 0.8mm x 0.8mm ball pitch)
H2A301G1656B_DDR2_64Mx16 (996.87 KB)
Features
  • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
  • All inputs and outputs are compatible with SSTL_18 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS
  • Bust length: 4 and 8.
  • Programmable CAS Latency (CL): 5,6 and 7
  • Programmable Additive Latency (AL): 0, 1, 2, 3, 4, 5 & 6.
  • Write Latency (WL) =Read Latency (RL) -1.
  • Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available.
  • Off-Chip Driver (OCD) Impedance Adjustment
  • On Die Termination (ODT)
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Average Refresh Period 7.8us at lower than Tcase 85 °C, 3.9us at 85°C < Tcase ≦ 95°C
  • RoHS Compliance
  • Partial Array Self-Refresh (PASR)
  • High Temperature Self-Refresh rate enable

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