Description

The H2A301G1656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-1066) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features:

1. posted CAS with additive latency,
2. write latency = read latency -1,
3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
4. normal and weak strength data output driver.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR2 device operates with a single power supply: 1.8V ± 0.1V VDD and VDDQ. Available package:
TFBGA-84Ball (with 0.8mm x 0.8mm ball pitch)