Hwaling Technology Co., Ltd.



Product Name : 1Gb (16Mx4Banksx8) DDR2 SDRAM

Item No. : H2A35120856B


The H2A35120856B is a 512M bits DDR2 SDRAM, organized as 16,777,216 words x 4 banks x 8 bits.
This device achieves high speed transfer rates up to 800Mb/sec/pin (DDR2-800) for general applications. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CLK rising and /CLK falling). All I/Os are synchronized with a single ended DQS or differential DQS- /DQS pair in a source synchronous fashion.
H2A35120856B _DDR2_64Mx8 (2.1 MB)
  • Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
  • Double Data Rate architecture: two data transfers per clock cycle
  • CAS Latency: 3, 4, 5 and 6
  • Burst Length: 4 and 8
  • Bi-directional, differential data strobes (DQS an/DQS ) are transmitted / received with data
  • Edge-aligned with Read data and center-aligned with Write data
  • DLL aligns DQ and DQS transitions with clock
  • Differential clock inputs (CLK and /CLK )
  • Data masks (DM) for write data
  • Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS
  • Posted /CAS programmable additive latency supported to make command and data bus efficiency
  • Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
  • Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
  • Auto-precharge operation for read and write bursts
  • Auto Refresh and Self Refresh modes
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = Read Latency - 1 (WL = RL - 1)
  • Interface: SSTL_18
  • Packaged in WBGA 60 Ball (8X12.5 mm2 ), using Lead free materials with RoHS compliant