512Mb (8Mx4Banks×16) DDR2 SDRAM

The H2A35121656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DDR2-1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features:

1. posted CAS with additive latency,
2. write latency = read latency -1,
3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
4. normal and weak strength data output driver.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 512 Mb DDR2 devices operate with a single power supply: 1.8V ± 0.1V VDD and VDDQ.
Available package:TFBGA-84Ball.