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H7A5EM2

256M-BIT 3.3V Serial NOR FLASH MEMORY

H7A5EM2_Serial NOR FLASH MEMORY (4.29 MB)
Features
  • 256Mbit Serial Flash
    – 32,768K-bytes
    – 256 bytes per programmable page
  • Standard, Dual, Quad SPI, DTR
    – Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#, RESET#
    – Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#, RESET#
    – Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
    – QPI: SCLK, CS#, IO0, IO1, IO2, IO3, RESET#
    – SPI/QPI DTR (Double Transfer Rate) Read
  • Flexible Architecture
    – Sector of 4K-byte
    – Block of 32/64k-byte
  • Advance Security Features
    – 2*1024-Bytes Security Registers With OTP Lock
  • Support 128 bits Unique ID
  • Software/ Hardware Write Protection
    – Write protect all/ portion of memory via software
    – Enable/ Disable protection with WP# Pin
    – Top or Bottom, Sector or Block selection
    – Advanced Sector Protection
  • Continuous Read With 8/16/32/64-byte Wrap
  • Package Options
    – SOP16: 300mil , WSON8: 8x6mm
    – All Pb-free packages are compliant RoHS, Halogen-Free and REACH.
  • Temperature Range & Moisture Sensitivity Level
    – Industrial. (-40℃ to +85℃), MSL3
  • Power Consumption
    – 6mA typical read current under 80MHz
    – 0.5uA typical Deep Power-Down current
  • Single Power Supply Voltage
    – 2.7 ~ 3.6V
  • Erase/ Program Suspend/ Resume
  • Endurance and Data Retention
    – Minimum 100,000 Program/ Erase Cycle
    – 20-year Data Retention typical
  • High Speed Clock Frequency
    – 120MHz for fast read with 30pF load
    – Dual I/O Data transfer up to 208Mbit/s
    – Quad I/O Data transfer up to 416Mbit/s
    – QPI Mode Data transfer up to 320Mbit/s
    – DTR Quad I/O Data transfer up to 400Mbit/s
  • Program/ Erase Speed
    – Page Program time: 0.25ms typical
    – Sector Erase time: 40ms typical
    – Block Erase time: 0.15/0.22s typical
    – Chip Erase time: 70s typical
  • 3 or 4-Byte Addressing Mode
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