4G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A14G24G6IX is a single 3.3v 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

The H7A14G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.