H2AD16G08F6S
16Gb (2Gbx8) DDR5 SDRAM
The 16Gb DDR5 SDRAM is organized as a 64Mbit x8 I/Os x 32 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 5600Mb/ sec/ pin (DDR5-5600) for general applications.
The chip is designed to comply with the following key DDR5 SDRAM features such as posted CAS, Programmable CWL, Internal Calibration via MPC, On Die Termination via Mode Register setting and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. The DDR5 device operates with 1.1V (1.067V~1.166V) and 1.8V (1.746V~1.908V) power supply.
The 16Gb DDR5 device is available in 82ball FBGAs(x8).
The chip is designed to comply with the following key DDR5 SDRAM features such as posted CAS, Programmable CWL, Internal Calibration via MPC, On Die Termination via Mode Register setting and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. The DDR5 device operates with 1.1V (1.067V~1.166V) and 1.8V (1.746V~1.908V) power supply.
The 16Gb DDR5 device is available in 82ball FBGAs(x8).
Features
- VDD = VDDQ = 1.1V (1.067V(- 3%) ~ 1.166V(+6%)).
- VPP = 1.8V(1.746V(-3%) ~ 1.908V(+6%)).
- Package : x8-32Banks (8 Bank Groups).
- JEDEC standard compliant.
- Programmable CAS Write Latency (CWL) = RL-2.
- 16-bit pre-fetch.
- Burst Length: 16 by default. 8 with tCCD=8, which does not allow. gapless READ or WRITE, where BC8 and BL32 refer to CA5BL*=L.
- Bi-directional Differential Data-Strobe.
- 2N mode.
- On Die Termination (ODT) via Mode Register setting.
- Average Refresh period 3.9us at lower than TCASE 85°C, 1.95us at 85°C < TCASE < 95 °C.
- Connectivity Test Mode (TEN) is supported.
- Asynchronous Reset.
- Package: 82 balls FBGA – x8.
- All of Lead-Free products are compliant for RoHS.
- All of products are Halogen-free.
- POD (Pseudo Open Drain) interface for data input/ output,command and address input.
- sPPR and hPPR capability.
- External VPP for DRAM activating power.
- JRefresh Management (RFM) is not required.
- CAI (Command Address Inversion).
- On-Die ECC is supported with ECC Transparency and ErrorCheck and Scrub (ECS).
- Command Address Inversion (CAI).
