Offered in 512Mx8bit, the H7A14G21F1CX is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page and an erase operation can be performed in typical 4.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The H7A14G21F1CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable app.
lications requiring non-volatility.