Hwaling Technology Co., Ltd.

Products

SPI NAND Flash
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Product Name : 4G-BIT 3.3V SPI-NAND FLASH MEMORY

Item No. : H7A44G25A4CX

Description

The H7A44G25A4CX is 1G-bit with spare 64Mbit capacity. The device is offered in 3.3V power supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32series connected Flash Cells. A program operation can be performed in typical 400us on the 2048-bytes and an erase operation can be performed in typical 2ms on a 128K-bytes block. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the H7A44G25A4CX’s extended reliability of 100K program/erase cycles by providing ECC (Error Correction Code) with real time mapping-out algorithm.

H7A44G25A4CX features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three signals are a clock input (SCLK), a serial data input(SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin, SIO1 pin, SIO2 pin SIO3 pin for address/dummy bits input and data output.

The copy back function allows the optimization of defective blocks management : when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. The H7A44G25A4CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Up to 2Kbytes can be programmed at a time. Pages can be erased in groups of 128KB erase. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via OIP bit. Advanced security features enhance the protection and security functions, please see security features section for more details.

The H7A44G25A4CX supports JEDEC standard manufacturer and device identification with a 8K bytes (4 pages) Secured OTP.

The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0).
H7A44G25A4CX_SPI_NAND Flash_4Gb (1.2 MB)
Features
  • 4G-bit SPI NAND FLASH
    – Page size : (4K+64spare) bytes
    – Block size : (128K+4K) bytes
    – Device size: 1024 blocks
  • Advanced Security Features
    – 8K-Byte OTP region
  • Support Standard, Dual, and Quad SPI
    – Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
    – Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD#
    – Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
  • High Clock Frequency
    – Quad I/O data transfer up to 320Mbits/s
    – 2048/64/16 wrap read option
  • Program/Erase/Read Cycle Time
    – Page read time: 250us Maximum(w/I ECC)
    – Page program time: 400us typical
    – Block erase time: 2ms typical
  • Software/Hardware Write Protection
    – Software protection of the entire device or ranges of blocks
    – Hardware protection throughWP#/li>
  • High Access Performance with Cache
    – Cache size: 2112 bytes
  • ECC Protection
    – 8 bits ECC for each 528 bytes
  • Enhanced Functions
    – Synchronous output of internal reset signals (custom-made)
    – Data in Block 0/Page 0 automatically loads to the cache after power up
  • Excellent Electrical Performance
    – Single supply voltage: 2.7~3.6V
    – Operating current < 20mA
    – Standby current < 100uA
  • Commercial Standard
    – Operating temp: -0°C to +85°C
    – Storage temp: -65°C to +150°C
History
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