The H7A41G25A4CX is 1G-bit with spare 64Mbit capacity. The device is offered in 3.3V power supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32series connected Flash Cells. A program operation can be performed in typical 400us on the 2048-bytes and an erase operation can be performed in typical 2ms on a 128K-bytes block. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the H7A41G25A4CX’s extended reliability of 100K program/erase cycles by providing ECC (Error Correction Code) with real time mapping-out algorithm.
H7A41G25A4CX features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O mode. The three signals are a clock input (SCLK), a serial data input(SI), and a serial data output (SO). Serial access to the device is enabled by CS# input. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and HOLD# pin become SIO0 pin, SIO1 pin, SIO2 pin SIO3 pin for address/dummy bits input and data output.
The copy back function allows the optimization of defective blocks management : when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. The H7A41G25A4CX is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Up to 2Kbytes can be programmed at a time. Pages can be erased in groups of 128KB erase. To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read command can be issued to detect completion status of a program or erase operation via OIP bit. Advanced security features enhance the protection and security functions, please see security features section for more details.
The H7A41G25A4CX supports JEDEC standard manufacturer and device identification with a 8K bytes (4 pages) Secured OTP.
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Software/Hardware Write Protection
– Software protection of the entire device or ranges of blocks
– Hardware protection throughWP#
High Access Performance with Cache
– Cache size: 1024 bytes
ECC Protection
– 8 bits ECC for each 528 bytes
Enhanced Functions
– Synchronous output of internal reset signals (custom-made)
– Data in Block 0/Page 0 automatically loads to the cache after power up
Excellent Electrical Performance
– Single supply voltage: 2.7~3.6V
– Operating current < 20mA
– Standby current < 100uA
Commercial Standard
– Operating temp: -0°C to +85°C
– Storage temp: -65°C to +150°C
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