Hwaling Technology Co., Ltd.

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MLC NAND Flash
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Product Name : 16G-Bit 3.3V NAND FLASH MEMORY

Item No. : H7A2AG21C1CX

Description

The H7A2AG21C1CX (16G-bit) NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

The H7A2AG21C1CX (16G-bit) NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN).
H7A2AG21C1CX_NAND FLASH MEMORY (710 KB)
Features
  • Open NAND Flash Interface (ONFI) 2.2-compliant1
  • Multiple-level cell (MLC) technology
  • Organization
    – Page size x8: 4320 bytes (4096 + 224 bytes)
    – Block size: 256 pages (1024K + 56K bytes)
    – Plane size: 2 planes x 1024 blocks per plane
    – Device size: 16Gb: 2048 blocks;32Gb: 4096 blocks
  • Synchronous I/O performance
    – Up to synchronous timing mode 4
    – Clock rate: 12ns (DDR)
    – Read/write throughput per pin: 166 MT/s
  • Asynchronous I/O performance
    – Up to asynchronous timing mode 5
    – Read/write throughput per pin: 50 MT/s
    – tRC/tWC: 20ns (MIN)
  • Array performance
    – Read page: 75μs (MAX)
    – Program page: 1300μs (TYP)
    – Erase block: 3.8ms (TYP)
  • Operating Voltage Range
    – VCC: 2.7–3.6V
    – VCCQ: 2.7–3.6V
  • Command set: ONFI NAND Flash Protocol
  • Advanced Command Set
    – Program cache
    – Read cache sequential
    – Read cache random
    – One-time programmable (OTP) mode
    – Multi-plane commands
    – Multi-LUN operations
    – Read unique ID
    – Copyback
  • Operating temperature:
    – Commercial: 0°C to +70°C
  • Package: 48-pin TSOP
History
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