Hwaling Technology Co., Ltd.

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DDR3 SDRAM

Product Name : 2Gb (16Mx8Banksx16) DDR3 SDRAM

Item No. : N4D02G16Y

Description

The N4D02G16Y is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16M words x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: such as posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and synchronous reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and CK# falling).

All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion..

The 2Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ.
N4D02G16Y_DDR3_16Mx8 (1.2 MB)
Features
  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5, 6, 7, 8,9
  • CAS Latency (CL): 6, 7, 8, 9, 10, 11,13
  • Write Latency (WL) = AL + CWL.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
    Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
  • RoHS Compliance
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