The N4D02G16Y is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16M words x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features: such as posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and synchronous reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and CK# falling).
All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion..
The 2Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ.