Hwaling Technology Co., Ltd.



Product Name : 1Gb (8Mx8Banksx16) DDR3 SDRAM

Item No. : N4D01G16W


The N4D01G16W is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 8Mbits x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.

The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: WBGA-96Ball (with 0.8mm - 0.8mm ball pitch)
N4D01G16W_DDR3_8Mx8 (957 KB)
  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • 8 bit prefetch architecture
  • Posted CAS by programmable additive latency: 0, CL-1 & CL-2
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Latency (CL): 6, 7, 8, 9, 10, 11 and 13
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength:RZQ/7, RZQ/6 (RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function
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