Hwaling Technology Co., Ltd.

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SPI NOR Flash
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Product Name : 512M-BIT 3V SPI-NOR MCP FLASH MEMORY

Item No. : H7A5FM26B7CX

Description

The H7A5FM26B7CX (2 X 256M-bit) Serial MCP Flash offers the highest memory density for the low pin-count package, as well as Concurrent Operations in Serial Flash memory for the first time.It is ideal for small form factor system designs, and applications that demand high Program/Erase data throughput.

The H7A5FM26B7CX introduces a new “Software Die Select (C2h)” instruction, and a factory assigned “Die ID#” for each stacked die. Each H7A5EM die can be accessed independently even though the interface is shared. The stack feature only allows a single die to be Active and have control of the SPI interface at any given time to avoid bus contention.

The H7A5FM26B7CX maintains all the SPI Flash features and functions, with the support for standard SPI (Serial Peripheral Interface), Dual I/O SPI, and Quad I/O SPI read operations through the shared SPI interface: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2, and I/O3.

Each H7A5EM memory array is organized into 131,072 programmable pages of 256-Byte each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.
H7A5FM26B7CX_SPI-NOR MCP FLASH MEMORY (797 KB)
Features
  • Basic Features
    – Density : 2X256M-bit / 2X32M-byte
    – Standard SPI: CLK, /CS, DI, DO
    – Dual SPI: CLK, /CS, IO0, IO1
    – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
    – 3 or 4-Byte Addressing Mode
    – Software Die Select (C2h)
  • High Performance Serial NOR Flash
    – 104MHz Standard/Dual/Quad SPI clocks
    – 208/416MHz equivalent Dual/Quad SPI
    – 50MB/s continuous data transfer rate
    – Min. 100K Program-Erase cycles per sector
    – More than 20-year data retention
  • Efficient “Concurrent Operations”
    – Independent single die access
    – Allows “Read while Program/Erase”
    – Allows “Multi Die Program/Erase”
    – Improves Program/Erase throughput
    – Reduces Suspend/Resume activities
  • Low Power, Wide Temperature Range
    – Single 2.7 to 3.6V supply
    – 4mA active current, <20μA standby current
  • Flexible Architecture with 4KB sectors
    – Uniform Sector/Block Erase (4K/32K/64K-Byte)
    – Program 1 to 256 byte per programmable page
    – Erase/Program Suspend & Resume
  • Advanced Security Features
    – Power Supply Lock-Down and OTP protection
    – Top/Bottom, Complement array protection
    – Individual Block/Sector array protection
    – 64-Bit Unique ID for individual die
    – Discoverable Parameters (SFDP) Register
    – 3X256-Bytes Security Registers with OTP locks
    – Volatile & Non-volatile Status Register Bits
  • Space Efficient Packaging
    – 16-Pin SOIC 300-mil
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