Product Name :
4G-Bit 3.3V PARALLEL SLC-NAND FLASH
Item No. :
H7A14G21G1IX
Description
The H7A14G21G1IX is a single 3.3V 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The H7A14G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Modes
– Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
– Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Access time
– Cell array to register: 25μs (max)
– Serial Read Cycle: 25 ns (min) (CL=50pF)
Page Read/ Program
– Random access: 25 μs (Max)
– Sequential access: 25 ns (Min)
– Program time/ Multiplane Program time: 300 μs (Typ)
Block Erase
– Block Erase time: 3.5 ms (Typ)
Operating current
– Read (25 ns cycle) 30 mA max.
- Program (avg.) 30 mA max/ Erase (avg.) 30 mA max
- Standby 50 μA max
Reliability
– 10 Year Data retention (Typ), Blocks zero are valid
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