The H7A12G21G1IX is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).
The H7A12G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
Modes
– Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
– Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Access time
– Cell array to register: 25μs (max)
– Serial Read Cycle: 25 ns (min) (CL=50pF)
Program/ Erase time
– Auto Page Program: 300 μs /page (typ.)
– Auto Block Erase: 3.5 ms /block (typ.)
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