Hwaling Technology Co., Ltd.



Product Name : 128Mb (2M×4Bank×16) Synchronous DRAM

Item No. : H2A11281633B


The H2A11281633B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Mega words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 128Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVTTL.
Available packages: TSOPII 54P 400mil.
  • All Inputs are Sampled at the Rising Edge of the System Clock
  • Auto Refresh and Self Refresh
  • 4,096 Refresh Cycles / 64ms (15.625us)

H2A11281633B_SDR_8Mx16(TSOP) (465 KB)
  • Fully Synchronous to Positive Clock Edge
  • Single 3.3V ±0.3V Power Supply
  • LVTTL Compatible with Multiplexed Address
  • Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page
  • Programmable CAS Latency (C/L) - 2 or 3
  • Data Mask (DQM) for Read / Write Masking
  • Programmable Wrap Sequence
    – Sequential (B/L = 1/2/4/8/full Page)
    – Interleave (B/L = 1/2/4/8)
  • Burst Read with Single-bit Write Operation