Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

Parallel NAND Flash Supplier

Axeme - Hwaling Technology Co., Ltd. ensures all of our parallel NAND flash, parallel flash memory are affordable and priced competitively with other similar products on the market. We promise that our service is second to none! Every person who purchases a product from Axeme - Hwaling Technology Co., Ltd. will have access to our service department when it is needed. In addition, we specialize in servicing the flash products needs of businesses locally and across the country. Our quality controllers perform a variety of quality processes in the entire production process in order to ascertain that only high-quality products are delivered at clients'end.
Item No. Product Name Density Voltage Package File Download
H7A11G21G1IX Parallel NAND Flash 1Gb 3.3V TSOP-48 12x20mm H7A11G21G1IX_PARALLEL SLC-NAND FLASH_1Gb (6.9 MB)
H7A11G24G6IX Parallel NAND Flash 1Gb 3.3V BGA-24 6x8mm H7A11G24G6IX_PARALLEL SLC-NAND FLASH_1Gb (6.9 MB)
H7A12G21G1IX Parallel NAND Flash 2Gb 3.3V TSOP-48 12x20mm H7A12G21G1IX_PARALLEL SLC-NAND FLASH_2Gb (5.6 MB)
H7A12G24G6IX Parallel NAND Flash 2Gb 3.3V BGA-24 6x8mm H7A12G24G6IX_PARALLEL SLC-NAND FLASH_2Gb (5.5 MB)
H7A14G21G1IX Parallel NAND Flash 4Gb 3.3V TSOP-48 12x20mm H7A14G21G1IX_PARALLEL SLC-NAND FLASH_4Gb (3.7 MB)
H7A14G24G6IX Parallel NAND Flash 4Gb 3.3V BGA-24 6x8mm H7A14G24G6IX_PARALLEL SLC-NAND FLASH_4Gb (3.6 MB)

H7A11G21G1IX

1G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A11G21G1IX is a single 3.3v 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A11G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

H7A11G24G6IX

1G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A11G24G6IX is a single 3.3v 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A11G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

H7A12G21G1IX

1G-Bit 1.8V NAND FLASH MEMORY

The H7A12G21G1IX is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A12G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

H7A12G24G6IX

2G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A12G24G6IX is a single 3.3v 2Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048 blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages).

The H7A12G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

H7A14G21G1IX

4G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A14G21G1IX is a single 3.3V 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

The H7A14G21G1IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

H7A14G24G6IX

4G-Bit 3.3V PARALLEL SLC-NAND FLASH

The H7A14G24G6IX is a single 3.3v 4Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).

The H7A14G24G6IX is a serial-type memory device which utilizes the I/O pins for both address and data input/ output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
With our quality standardized and customized products like our parallel NAND flash, we have earned a huge client base, spread all across the globe. For nearly 20 years it has been our passion and our mission to create products that make people’s lives better, easier and more fulfilling. Moreover, our flash products have always been known for quality, reliability and solid performance, making Axeme - Hwaling Technology Co., Ltd. becomes the most specified brand in the parallel flash memory business. Contact us today to find out more about our manufacturing capabilities and our extensive range of flash products options.