Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

Parallel NAND Flash

Axeme - Hwaling Technology Co., Ltd. believes that customer service is the most important aspect of our business, and we want to be there whenever and wherever you need us. Use our experience to help you meet your Parallel NAND Flash and FLASH IC requirements consistently and competitively.
Item No. Product Name Density Voltage Package File Download
H7A11G24B9CN Parallel NAND Flash 1Gb 3.3V VFBGA-48 6.5x8mm H7A11G24B9CN_Parallel_NAND Flash_1Gb (502 KB)
H7A11G64B9CN Parallel NAND Flash 1Gb 1.8V VFBGA-48 6.5x8mm,1.8V_X8 bus H7A11G64B9CN_Parallel_NAND Flash_1Gb (501 KB)
H7A11G24B5CH Parallel NAND Flash 1Gb 3.3V VFBGA-63 (9*11) H7A11G24B5CH_Parallel_NAND Flash_1Gb (470 KB)
H7A11G21B1CH Parallel NAND Flash 1Gb 3.3V TSOP-48 12x20mm H7A11G21B1CH_Parallel_NAND Flash_1Gb (474 KB)
H7A12G24B5CN Parallel NAND Flash 2Gb 3.3V VFBGA-63 (9*11) H7A12G24B5CN_Parallel_NAND Flash_2Gb (668 KB)
H7A12G21B1CN Parallel NAND Flash 2Gb 3.3V TSOP-48 12x20mm H7A12G21B1CN_Parallel_NAND Flash_2Gb (503 KB)
H7A12G54B5CN Parallel NAND Flash 2Gb 1.8V VFBGA-63 (9*11), 1.8V_X16 bus H7A12G54B5CN_Parallel_NAND Flash_2Gb (511 KB)

H7A11G24B9CN

1G-Bit 3.3V NAND FLASH MEMORY

The H7A11G24B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A11G64B9CN

1G-Bit 1.8V NAND FLASH MEMORY

The H7A11G64B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G64B9CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A11G24B5CH

1G-Bit 3.3V NAND FLASH MEMORY

The H7A11G24B5CH (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G24B5CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A11G21B1CH

1G-Bit 3.3V NAND FLASH MEMORY

The H7A11G21B1CH (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.

The memory array totals 138,412,032 bytes, and organized into 1,024 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A11G21B1CH supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A12G24B5CN

2G-Bit 3.3V NAND FLASH MEMORY

The H7A12G24B5CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.

The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G24B5CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A12G21B1CN

2G-Bit 3.3V NAND FLASH MEMORY

The H7A12G21B1CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA at 3V and 10uA for CMOS standby current.

The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G21B1CN supports the standard NAND flash memory interface using the multiplexed 8-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.

H7A12G54B5CN

2G-Bit 1.8V NAND FLASH MEMORY

The H7A12G54B5CN (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 13mA at 1.8V and 10uA for CMOS standby current.

The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes. Each block consists of 64 programmable pages of 2,112-bytes each. Each page consists of 2,048-bytes for the main data storage area and 64-bytes for the spare data area (The spare area is typically used for error management functions). The H7A12G54B5CN supports the standard NAND flash memory interface using the multiplexed 16-bit bus to transfer data, addresses, and command instructions.

The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
Axeme - Hwaling Technology Co., Ltd. is the global leader in the design and manufacturing of high-performance Memory IC and Parallel NAND Flash in Taiwan. We are committed to our products that are cost effective, durable, and offers a high return on investment. We will do our best to help you find the material you require, and can provide advice and guidance or direct you to someone who can.