Axeme - Hwaling Technology Co., Ltd.

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DDR3 SDRAM

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Item No. Product Name Density Organization Voltage Package Remark File Download
N4D01G16W DDR3 SDRAM 1Gb 64Mb x 16 1.5V FBGA-96 9x13mm N4D01G16W_DDR3_8Mx8 (957 KB)
N4D01G16Y DDR3 SDRAM 1Gb 64Mb x 16 1.5V FBGA-96 7.5x13mm N4D01G16Y_DDR3_8Mx8 (951 KB)
N4D02G16Y DDR3 SDRAM 2Gb 128Mb x 16 1.5V FBGA-96 7.5x13mm N4D02G16Y_DDR3_16Mx8 (1.2 MB)
N4D02G16E DDR3 SDRAM 2Gb 128Mb x 16 1.5V FBGA-96 8x14mm N4D02G16E_DDR3_16Mx8 (994 KB)
N4D02G08A DDR3 SDRAM 2Gb 256Mb x 8 1.5V FBGA-78 8x10.5mm N4D02G08A_DDR3_32Mx8 (1.3 MB)
N4D04G08A DDR3 SDRAM 4Gb 512Mb x 8 1.5V FBGA-78 8x10.5mm N4D04G08A_DDR3_64Mx8 (1.1 MB)
N4D04G08S DDR3 SDRAM 4Gb 512Mb x 8 1.5V FBGA-78 9.4x11.1mm N4D04G08S_DDR3_64Mx8 (1.0 MB)
N4D04G08U DDR3 SDRAM 4Gb 512Mb x 8 1.5V FBGA-78 7.5x11mm N4D04G08U_DDR3_64Mx8 (1.1 MB)
N4D04G16E DDR3 SDRAM 4Gb 256Mb x 16 1.5V FBGA-96 8x14mm N4D04G16E_DDR3_32Mx8 (897 KB)

N4D01G16W

1Gb (8Mx8Banksx16) DDR3 SDRAM

The N4D01G16W is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 8Mbits x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.

The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: WBGA-96Ball (with 0.8mm - 0.8mm ball pitch)

N4D01G16Y

1Gb (8Mx8Banksx16) DDR3 SDRAM

The N4D01G16Y is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 8Mbits x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.

The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: WBGA-96Ball (with 0.8mm - 0.8mm ball pitch)

N4D02G08A

2Gb (32Mx8Banksx8) DDR3 SDRAM

The N4D02G08A is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 32Mbits x 8 banks by 8 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination, (4) programmable driver strength data,(5) seamless BL4 access with bank-grouping.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.

The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.

Available package: FBGA-78Ball (with 0.8mm x 0.8mm ball pitch)

N4D02G16E

2Gb (16Mx8Banksx16) DDR3 SDRAM

The N4D02G16E is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination, (4) programmable driver strength data,(5) seamless BL4 access with bank-grouping.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.

The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.

N4D02G16Y

2Gb (16Mx8Banksx16) DDR3 SDRAM

The N4D02G16Y is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16M words x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: such as posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and synchronous reset.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and CK# falling).

All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion..

The 2Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ.

N4D04G08A

4Gb (64Mx8Banks×8) DDR3 SDRAM

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM Containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks.

These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

N4D04G08S

4Gb (64Mx8Banks×8) DDR3 SDRAM

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM Containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks.

These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

N4D04G08U

4Gb (64Mx8Banks×8) DDR3 SDRAM

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM Containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks.

These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

N4D04G16E

4Gb (32Mx8Banksx16) DDR3 SDRAM

The N4D04G16E is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 4G bits which organized as 32Mbits x 8 banks by 16 bits.

This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) On Die Termination (4) programmable driver strength data,(5) seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).

All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.

The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Axeme - Hwaling Technology Co., Ltd.’s memory module is currently one of the most advanced axeme memory module, memory module available on the world market and will provide the best product ratio between quality-price. We not only provide positive contribution to a sustaining development, but also preserve a clean earth for the next generation. Please call or email us if you have any questions concerning compact axeme memory module, memory module.