Toggle menu

Axeme - Hwaling Technology Co., Ltd.

Memory IC Manufacturer

Axeme - Hwaling Technology Co., Ltd. is your leading industry resource for manufacturers and product information on the memory IC, DDR3 SDRAM. Going forward, our company will continue to develop smaller, lower power consumption devices and solutions that maximize performance and bring added value. We guarantee the quality of our products, since we deal only with authorized and reliable memory IC, DDR3 SDRAM manufactures. The parts you buy from us will fit your needs perfectly.
Categories > DRAM IC > DDR3 SDRAM

H2A402G1666B

2Gb (16Mx8Banksx16) DDR3 SDRAM

I'm interested
The H2A402G1666B is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination,
  4. programmable driver strength data,
  5. seamless BL4 access with bank-grouping.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Available package: FBGA-96Ball (with 0.8mm x 0.8mm ball pitch)
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 9, 10, 11
  • CAS Latency (CL): 9, 10, 11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval: 7.8us Tcase between-40°C ~ 85°C
  • Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
  • RoHS Compliance
  • Driver Strength: RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

Send Message
Contact Information
Verification Code Change Image

By submitting your contact information, you acknowledge that you consent to our processing data in accordance with the Privacy and Cookie Policy.

Since its inception in 1998, Axeme - Hwaling Technology Co., Ltd. has focused its business solely on manufacturing high efficiency memory IC, DDR3 SDRAM for a wide variety of commercial applications, providing the most comprehensive line of memory IC, DDR3 SDRAM on the market. Axeme - Hwaling Technology Co., Ltd. is a manufacturer of memory IC, DDR3 SDRAM that can be custom configured to meet the most demanding of process applications, and we are known for our innovation and is persistently thriving to push development.