Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

H2A4 DDR3 SDRAM Manufacturer in Taiwan

We have H2A4 DDR3 SDRAM, DDR3 SDRAM services! With some of the industry’s top engineers, we’ve pioneered new innovations and products that have revolutionized the H2A4 DDR3 SDRAM, DDR3 SDRAM industry with incomparable reliability and durability. We are the preferred choice of our customers for offering an outstanding product assortment and flexible services. We believe that our industry is one where reliability in long-term use, functionality and cost are all of great importance, but that it is reliability that differentiates the truly superior products.

H2A401G1666B

1Gb (8Mx8Banksx16) DDR3 SDRAM

The H2A401G1666B is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 8Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: WBGA-96Ball (with 0.8mm - 0.8mm ball pitch)
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency: 0, CL-1 & CL-2
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Latency (CL): 6, 7, 8, 9, 10, 11 and 13
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8us Tcase between -40°C ~ 85°C
  • Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
  • RoHS Compliance
  • Driver Strength:RZQ/7, RZQ/6 (RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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Axeme - Hwaling Technology Co., Ltd. has achieved a milestone by incorporating the assembly of locally made and also best imported casing, thus bringing the lowest of cost. Hopefully, you can see how enthusiastic we are about creating excellent H2A4 DDR3 SDRAM, DDR3 SDRAM! We wish that results in excellent customer encounter with our items. Our range of H2A4 DDR3 SDRAM, DDR3 SDRAM meet connectivity challenges in a wide array of environments and conditions. We work collaboratively and innovate globally.