Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

DDR3 SDRAM Supplier in Taiwan

4Gb (32Mx8Banksx16) DDR3 SDRAM is committed to quality, innovation, and service through our knowledgeable team that is dedicated to exceeding customer expectations. All our products are precisely developed by a creative team of professionals as per contemporary market trends. Axeme - Hwaling Technology Co., Ltd. starts to use the automated production process in order to increase the quality and competitiveness of 4Gb (32Mx8Banksx16) DDR3 SDRAM in recent years. If you have any questions, want to buy in bulk, or have us give you a quote for a 4Gb (32Mx8Banksx16) DDR3 SDRAM to fit your needs, please email us.

H2A404G1666J

4Gb (32Mx8Banksx16) DDR3 SDRAM

The H2A404G1666J is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 4G bits which organized as 32Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :

  • VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply).
  • 8 Internal memory banks (BA0-BA2).
  • Differential clock input (CK,/CK).
  • Programmable /CAS Latency: 6, 7, 8, 9, 10, 11, 12, 13
  • /CAS WRITE Latency (CWL): 5, 6, 7, 8, 9
  • POSTED CAS ADDITIVE Programmable Additive
    Latency (AL): 0, CL-1, CL-2 clock
  • Programmable Sequential / Interleave Burst Type.
  • Programmable Burst Length: 4, 8.
    Through ZQ pin (RZQ:240 ohm±1%)
  • 8n-bit prefetch architecture.
  • Output Driver Impedance Control.
  • Differential bidirectional data strobe.
  • Internal(self) calibration: Internal self calibration.
  • OCD Calibration.
  • Dynamic ODT (Rtt_Nom & Rtt_WR)
  • Auto Self-Refresh
  • Self-Refresh Temperature
  • RoHS compliance and Halogen free
  • Packages: 96-Ball BGA for x16 components

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Axeme - Hwaling Technology Co., Ltd. is a Taiwan-based company, which acts globally via its own offices, representatives and well-developed collaboration with partners. Keeping in mind the importance of clients' time, we make sure that our products are delivered to them within the promised time-period. When our customers purchase our 4Gb (32Mx8Banksx16) DDR3 SDRAM, they know they are getting value for their money, with performance, reliability, and quality. If you are not satisfied with our 4Gb (32Mx8Banksx16) DDR3 SDRAM or have ordered a wrong item, please let us know. Axeme - Hwaling Technology Co., Ltd. will reply to you as soon as possible. We look forward to doing business with you and establishing an ongoing relationship.