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Axeme - Hwaling Technology Co., Ltd.

DRAM IC, DDR3 SDRAM Supplier in Taiwan

Our company is a reliable manufacturer of DDR3 SDRAM, DRAM IC in Taiwan. We offer our services using advance technology and good quality raw materials in adherence with the set international quality standards. Our DDR3 SDRAM, DRAM IC are highly appreciated among our clients for their optimum and superior quality. Moreover, We are backed by a magnificent infrastructure facility that is equipped with cutting-edge technology that helps us in the proper production and storage of the proffered range.
Categories > DRAM IC > DDR3 SDRAM

H2A402G1666A

2Gb (16Mx8Banksx16) DDR3 SDRAM

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The H2A402G1666A is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  • posted CAS with additive latency,
  • write latency = read latency -1,
  • On Die Termination,
  • programmable driver strength data,
  • seamless BL4 access with bank-grouping.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Available package: FBGA-96Ball (with 0.8mm x 0.8mm ball pitch)
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 9, 10, 11
  • CAS Latency (CL): 9, 10, 11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength: RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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Our company is a reputed DDR3 SDRAM, DRAM IC manufacturer in hardware & metal products. We have a well maintained quality management comprising a team of experienced professionals that keeps an eye on every individual product to ensure durability. You'll benefit from our resources, our experience and our personalized customer service. So should you have any questions or need our any products of Axeme - Hwaling Technology Co., Ltd., please don't hesitate to contact us. We are very welcome any further inquiries and comments from you.