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Axeme - Hwaling Technology Co., Ltd.

DDR3 SDRAM Supplier

At Axeme - Hwaling Technology Co., Ltd., we strive to bring you the best 4Gb (32Mx8Banksx16) DDR3 SDRAM H2A404G1666N for the best price. Our related products, such as Memory IC and Memory Module are high in quality with reasonable price.
Categories > DRAM IC > DDR3 SDRAM

H2A404G1666N

4Gb (32Mx8Banksx16) DDR3 SDRAM

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The H2A404G1666N is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 4G bits which organized as 32Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :

  • JEDEC Standard VDD/VDDQ = +1.5V ± 0.075V
  • Operating temperature:
    • Normal operating temperature: TC = 0~85°C
    • Extended temperature: TC = 85~95°C
  • Supports JEDEC clock jitter specification
  • Fully synchronous operation
  • Fast clock rate: 800/933MHz
  • Differential Clock, CK & CK#
  • Bidirectional differential data strobe –DQS & DQS#.
  • 8 internal banks for concurrent operation
  • 8n-bit prefetch architecture
  • Pipelined internal architecture
  • Precharge & active power down
  • Programmable Mode & Extended Mode registers
  • Additive Latency (AL): 0, CL-1, CL-2
  • Programmable Burst lengths: 4, 8
  • Burst type: Sequential / Interleave
  • Output Driver Impedance Control
  • Write Leveling
  • ZQ Calibration
  • RoHS compliant
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Average Refresh Period
    • 7.8us @ 0°C ≦TC≦ +85°C
    • 3.9us at 85°C < Tcase ≦ 95°C
  • 96-ball 7.5 x 13.5 x 1.2mm FBGA package
    • Pb and Halogen Free

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Axeme - Hwaling Technology Co., Ltd. controls everything from initial design through manufacturing, testing, and packaging, so we can offer 4Gb (32Mx8Banksx16) DDR3 SDRAM in quickly and economically. If you have questions, comments, feedback, or ideas please let us know.