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Axeme - Hwaling Technology Co., Ltd.

DDR3 SDRAM Supplier

With nuber years of experience in the design and manufacture of DDR3 SDRAM, DRAM IC, we understand what it takes to meet demanding customer requirements. Our quality proven range and client centric approach have helped us in carving a niche for ourselves in the market. With our great buying power on different major brands components purchasing, plus our precise producing procedure control, we can supply you high quality products with great price.
Categories > DRAM IC > DDR3 SDRAM

H2A408G1666C

8Gb (64Mx8Banksx16) DDR3 SDRAM

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The H2A408G1666C is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process which organized as 64Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  • posted CAS with additive latency,
  • write latency = read latency -1,
  • On Die Termination,
  • programmable driver strength data,
  • seamless BL4 access with bank-grouping.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :

  • Power Supply: VDD = VDDQ = 1.5V ±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5,6,7,8
  • CAS Latency (CL): 6, 7, 8, 9, 10, 11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval: 85°C ~ 95°C
  • RoHS Compliance
  • Driver Strength: RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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For more than 10 years, Axeme - Hwaling Technology Co., Ltd. has been committed to providing DDR3 SDRAM, DRAM IC of the highest quality and greatest value to its customers. Our DDR3 SDRAM, DRAM IC are fabricated using premium quality materials that are tested for their efficiency and durability. If you have questions concerning our DDR3 SDRAM, DRAM IC, please feel free to get in touch with the contact person responsible for your region, use our general Contact Form or Contact Us at the headquarters. We are here for you!