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Axeme - Hwaling Technology Co., Ltd.

DDR3 SDRAM | The Top Quality

Axeme - Hwaling Technology Co., Ltd. offers a wide range of high performance DDR3 SDRAM with style, performance and the safety of you and your family in mind. We have been specializing in manufacturing DDR3 SDRAM for many years, all with top quality. We promise to provide great products that work well along with knowledgeable staff utilizing excellent customer service skills to respectfully and confidently assist clients.
Categories > DRAM IC > DDR3 SDRAM

H2A408G3266A

8Gb (32Mx8Banks×32) DDR3 SDRAM

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The H2A408G3266A is a high speed stack multi-chip package integrated 4Gbits x2 DDR3 SDRAM and fabricated with ultra high performance CMOS process containing 8G bits which organized as 32Mbits x 8 banks by 32 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
The 8Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ.
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
  • All inputs and outputs are compatible with SSTL_15interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5,6,7,8
  • CAS Latency(CL): 5,6,7,8,9,10,11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT)options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval:7.8us Tcase between 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength:RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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Axeme - Hwaling Technology Co., Ltd. works with customers at all stages, from the design process to early engineering collaboration to hands-on customer support and on-time delivery. We create superior customer experiences and successful outcomes. We are a global manufacturer of high-quality DDR3 SDRAM and our company's internal strategy to continually improve quality and delivery meant the DDR3 SDRAM was a product fit for the customers. We maintain the top brands collection of modern equipment to meet the best requirements of our clients. All our products are designed with new innovatory features which make them superior in performance, advanced in quality, consistent and highly sustainable.