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DDR3 SDRAM Supplier
At Axeme - Hwaling Technology Co., Ltd., we strive to bring you the best 4Gb (64Mx8Banks×8) DDR3 SDRAM H2A404G0866A for the best price. Our related products, such as Memory IC and Memory Module are high in quality with reasonable price.
H2A404G0866A
4Gb (64Mx8Banks×8) DDR3 SDRAM
The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM Containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM.
The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
Features :
- JEDEC Standard VDD/VDDQ = 1.5V±0.075V
- 8 Internal memory banks (BA0-BA2)
- Differential clock input (CK,/CK)
- Bust length: 4 with Burst Chop (BC) and 8.
- CAS Write Latency (CWL): 5, 6, 7, 8, 9
- CAS Latency (CL): 6, 7, 8, 9, 10, 11, 12, 13
- POSTED CAS ADDITIVE Programmable Additive
Latency (AL): 0, CL-1, CL-2 clock - Programmable Sequential / Interleave Burst Type
- 8n-bit prefetch architecture
- Output Driver Impedance Control
- Differential bidirectional data strobe
- Internal(self) calibration:Internal self calibration
- OCD Calibration
- Dynamic ODT (Rtt_Nom & Rtt_WR)
- Auto Self-Refresh
- Self-Refresh Temperature
- RoHS compliance and Halogen free
- Packages: 78-Balls BGA for x8 components
Axeme - Hwaling Technology Co., Ltd. controls everything from initial design through manufacturing, testing, and packaging, so we can offer 4Gb (64Mx8Banks×8) DDR3 SDRAM in quickly and economically. If you have questions, comments, feedback, or ideas please let us know.