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Axeme - Hwaling Technology Co., Ltd.

DDR3 SDRAM Supplier

Axeme - Hwaling Technology Co., Ltd. is committed to technological innovation to keep our continued leadership in a highly competitive global market. We intend to be the dominant supplier of DDR3 SDRAM, DRAM IC in our market areas by offering our retail customers, professional installers, and jobbers the best combination of price and quality provided with the highest possible service level. As a leading manufacturer of DDR3 SDRAM, DRAM IC, our products have a reputation for quality.
Categories > DRAM IC > DDR3 SDRAM

H2A402G0866B

2Gb (32Mx8Banksx8) DDR3 SDRAM

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The H2A402G0866B is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 32Mbits x 8 banks by 8 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.

The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination,
  4. programmable driver strength data,
  5. seamless BL4 access with bank-grouping.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Available package: FBGA-78Ball (with 0.8mm x 0.8mm ball pitch)
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 9, 10, 11
  • CAS Latency (CL): 9, 10, 11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength: RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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Axeme - Hwaling Technology Co., Ltd. is a technology company focused on the development and distribution of DDR3 SDRAM, DRAM IC. With a competitive approach, our workforce strives to meet the expectations of our clients and offer them with the desired end results. Our strict inspections and testing have ensured that all our DDR3 SDRAM, DRAM ICachieve a high level of performance even in harsh conditions. Our team is the innate strength of our organization. Welcome to contact with us if you are looking for highly efficient DDR3 SDRAM, DRAM IC.