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At Axeme - Hwaling Technology Co., Ltd. we truly value the relationship of each and every customer. We respect your privacy and will never provide any of personal information without your permission. Through years of hard work and dedication, we are now the largest DDR3 SDRAM, H2A4 DDR3 SDRAM manufacturer in Taiwan. We consider sincerity, efficiency, quality and innovation for our business, however, we are also sincerely grateful to have lots of loyalty customers supporting us. We will keep providing outstanding products and services to each valued customers.
H2A401G0866B
1Gb (16M×8Bank×8) DDR 3 SDRAM
The H2A401G0866B is a 1G bits DDR3 SDRAM, organized as 16,777,216 words × 8 banks × 8 bits. This device achieves high speed transfer rates up to 1600 Mb/sec/pin (DDR3-1600) for various applications.
The H2A401G0866B is designed to comply with the following key DDR3 SDRAM features such as posted /CAS, programmable /CAS Write Latency (CWL), ZQ calibration, on die termination and asynchronous reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion.
The H2A401G0866B is designed to comply with the following key DDR3 SDRAM features such as posted /CAS, programmable /CAS Write Latency (CWL), ZQ calibration, on die termination and asynchronous reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous fashion.
Features :
- JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
- Double Data Rate architecture: two data transfers per clock cycle
- Eight internal banks for concurrent operation
- 8 bit prefetch architecture
- CAS Latency: 6, 7, 8, 9, 10 and 11 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)
- Programmable read burst ordering: interleaved or nibble sequential
- Bi-directional, differential data strobes (DQS and /DQS) are transmitted / received with data
- Edge-aligned with read data and center-aligned with write data
- DLL aligns DQ and DQS transitions with clock
- Differential clock inputs (CK and /CK) Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
- Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
- Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
- Auto-precharge operation for read and write bursts
- Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
- Precharged Power Down and Active Power Down
- Data masks (DM) for write data
- Programmable CAS Write Latency (CWL) per operating frequency
- Write Latency WL = AL + CWL
- Interface: SSTL_15
- Packaged in WBGA 78 Ball (8x10.5 mm2 ), using lead free materials with RoHS compliant
Axeme - Hwaling Technology Co., Ltd.’s DDR3 SDRAM is currently one of the most advanced DDR3 SDRAM, H2A4 DDR3 SDRAM available on the world market and will provide the best product ratio between quality-price. We not only provide a positive contribution to a sustainable development but also preserve a clean earth for the next generation. Please call or email us if you have any questions concerning compact DDR3 SDRAM, H2A4 DDR3 SDRAM.