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DDR3 SDRAM Manufacturer
DDR3 SDRAM is being widely used today by businesses as a way to make DDR3 SDRAM can do a variety of other functions depending on what specific needs the business requires. To ensure that the requirements of this policy are met, Axeme - Hwaling Technology Co., Ltd. will keep providing and maintaining safe and healthy working conditions, equipment and systems of work, together with adequate information, instruction, training and supervision for all employees.
H2A401G1666A
1Gb (8Mx8Banksx16) DDR3 SDRAM
The H2A401G1666A is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 8Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: FBGA-96Ball (with 0.8mm - 0.8mm ball pitch)
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
- posted CAS with additive latency,
- write latency = read latency -1,
- On Die Termination
- programmable driver strength data,
- seamless BL4 access.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR3 devices operates with a single power supply: 1.5V ± 0.075V VDD and VDDQ. Available package: FBGA-96Ball (with 0.8mm - 0.8mm ball pitch)
Features :
- JEDEC Standard VDD/VDDQ = 1.5V±0.075V.
- All inputs and outputs are compatible with SSTL_15 interface.
- Fully differential clock inputs (CK, /CK) operation.
- Eight Banks
- Posted CAS by programmable additive latency: 0, CL-1 & CL-2
- Bust length: 4 with Burst Chop (BC) and 8.
- CAS Write Latency (CWL): 5,6,7,8
- Programmable CAS Latency (CL): 9, 10, 11
- Write Latency (WL) =Read Latency (RL) -1.
- Bi-directional Differential Data Strobe (DQS).
- Data inputs on DQS centers when write.
- Data outputs on DQS, /DQS edges when read.
- On chip DLL align DQ, DQS and /DQS transition with CK transition.
- DM mask write data-in at the both rising and falling edges of the data strobe.
- Sequential & Interleaved Burst type available both for 8 & 4 with BC.
- Multi Purpose Register (MPR) for pre-defined pattern read out
- On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
- Auto Refresh and Self Refresh
- 8,192 Refresh Cycles / 64ms
- Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
- Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
- RoHS Compliance
- Driver Strength:RZQ/7, RZQ/6 (RZQ=240Ω)
- High Temperature Self-Refresh rate enable
- ZQ calibration for DQ drive and ODT
- RESET pin for initialization and reset function
As a result of its commitment to R&D, manufacturing and quality control, Axeme - Hwaling Technology Co., Ltd. engineers reliable and long-lasting solutions as a partner for continuous improvement. With extensive expertise in engineering and product design, Axeme - Hwaling Technology Co., Ltd. able to offer value-added products to our customers. We review our offerings regularly to make sure our prices are competitive, if not the lowest available. For more details about our DDR3 SDRAM, please contact with us immediately.