Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

DDR3 SDRAM Manufacturer in Taiwan

As a leading manufacturer of DDR3 SDRAM, DRAM IC, we provide DDR3 SDRAM, DRAM IC with high quality and reasonable price. Axeme - Hwaling Technology Co., Ltd. firmly believes that inform customers make better choices and as such we like educate wherever possible with regards to existing systems and new advances in technology. Our company is a professional manufacturer of DDR3 SDRAM, DRAM IC with top quality. As a client centric company, we constantly endeavor to offer quality assortment and we know that it is essential for us to serve the demands of our valued clients that are eminent in the domestic as well as international markets.

H2A402G0866C

2Gb (32Mx8Banksx8) DDR3 SDRAM

The H2A402G0866C is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 32Mbits x 8 banks by 8 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination,
  4. programmable driver strength data,
  5. seamless BL4 access with bank-grouping.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Available package: FBGA-78Ball (with 0.8mm x 0.8mm ball pitch)
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 9, 10, 11
  • CAS Latency (CL): 9, 10, 11
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Refresh Interval: 7.8us Tcase between 0°C ~ 85°C
  • RoHS Compliance
  • Driver Strength: RZQ/7, RZQ/6(RZQ=240Ω)
  • High Temperature Self-Refresh rate enable
  • ZQ calibration for DQ drive and ODT
  • RESET pin for initialization and reset function

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