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4Gb (32Mx8Banksx16) DDR3 SDRAM, H2A404G1666C
Axeme - Hwaling Technology Co., Ltd. has consistently maintained ours leading position in the Taiwan market with standard and special 4Gb (32Mx8Banksx16) DDR3 SDRAM. Owing to the stringent quality policy, our 4Gb (32Mx8Banksx16) DDR3 SDRAM meets the exact requirements of varied clients. We are one of the leading suppliers and exporters of optimum quality H2A404G1666C, 4Gb (32Mx8Banksx16) DDR3 SDRAM. Also, our 4Gb (32Mx8Banksx16) DDR3 SDRAM is illustrious in the market for its perfect designing, flawless performance, cost-effectiveness, and other such features.
H2A404G1666C
4Gb (32Mx8Banksx16) DDR3 SDRAM
The H2A404G1666C is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 4G bits which organized as 32Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
- posted CAS with additive latency,
- write latency = read latency -1,
- On Die Termination
- programmable driver strength data,
- seamless BL4 access.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :
- VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply).
- 8 Internal memory banks (BA0-BA2).
- Differential clock input (CK,/CK).
- Programmable /CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13
- /CAS WRITE Latency (CWL): 5,6,7,8,9
- POSTED CAS ADDITIVE Programmable Additive
Latency (AL): 0, CL-1, CL-2 clock - Programmable Sequential / Interleave Burst Type.
- Programmable Burst Length: 4, 8. Through ZQ pin (RZQ:240 ohm±1%)
- 8n-bit prefetch architecture.
- Output Driver Impedance Control.
- Differential bidirectional data strobe.
- Internal(self) calibration: Internal self calibration.
- OCD Calibration.
- Dynamic ODT (Rtt_Nom & Rtt_WR)
- Auto Self-Refresh
- Self-Refresh Temperature
- RoHS compliance and Halogen free
- Packages: 96-Ball BGA for x16 components
Axeme - Hwaling Technology Co., Ltd. is a professional manufacturer specializes in manufacturing 4Gb (32Mx8Banksx16) DDR3 SDRAM. In order to achieve quality management and the quality assurance requirements, we especially make the quality manual to ensure that the products are produced in accordance to meet customer requirements. Moreover, we continually develop the innovative 4Gb (32Mx8Banksx16) DDR3 SDRAM to meet the various market demands and bring multiple benefits to customers always. Please feel free to leave us a message if you have any questions. We will reply to you as soon as possible and offer you our best services.