Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

4Gb (32Mx8Banksx16) DDR3 SDRAM, H2A404G1666A

Axeme - Hwaling Technology Co., Ltd. has a wide variety of 4Gb (32Mx8Banksx16) DDR3 SDRAM for many different applications. With many years of experience, we have the core technical knowledge for 4Gb (32Mx8Banksx16) DDR3 SDRAM to satisfy our customers' demands. Our 4Gb (32Mx8Banksx16) DDR3 SDRAM is known for their long work life, easy handling, and low maintenance. This has been possible with the use of the best raw materials that go into the manufacturing of our expansive product line. Thank you for visiting our website and we hope you enjoy our products as much as we do.

H2A404G1666A

4Gb (32Mx8Banksx16) DDR3 SDRAM

The H2A404G1666A is a high speed Double Date Rate 3 (DDR3) Synchronous DRAM fabricated with ultra high performance CMOS process containing 4G bits which organized as 32Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed
double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination
  4. programmable driver strength data,
  5. seamless BL4 access.

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :

  • VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply).
  • 8 Internal memory banks (BA0-BA2).
  • Differential clock input (CK,/CK).
  • Programmable /CAS Latency: 6,7,8,9,10,11,12,13
  • /CAS WRITE Latency (CWL): 5,6,7,8,9
  • POSTED CAS ADDITIVE Programmable Additive
    Latency (AL): 0, CL-1, CL-2 clock
  • Programmable Sequential / Interleave Burst Type.
  • Programmable Burst Length: 4, 8. Through ZQ pin (RZQ:240 ohm±1%)
  • 8n-bit prefetch architecture.
  • Output Driver Impedance Control.
  • Differential bidirectional data strobe.
  • Internal(self) calibration: Internal self calibration.
  • OCD Calibration.
  • Dynamic ODT (Rtt_Nom & Rtt_WR)
  • Auto Self-Refresh
  • Self-Refresh Temperature
  • RoHS compliance and Halogen free
  • Packages: 96-Ball BGA for x16 components

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Axeme - Hwaling Technology Co., Ltd. has been the world leader in manufacturing 4Gb (32Mx8Banksx16) DDR3 SDRAM, to achieve the customer's needs, we had to obtain a maximum level of performance, business, and manufacturing excellence. Renowned for their higher efficiency, accuracy and durability, our 4Gb (32Mx8Banksx16) DDR3 SDRAM is setting standards of performance and high quality in the entire market. Axeme - Hwaling Technology Co., Ltd. is committed to developing 4Gb (32Mx8Banksx16) DDR3 SDRAM that ultimately create innovative products that exceed customer expectations. Thank you for your time and business, if you have any questions or needs, please do not hesitate to contact us.