Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

2Gb (16Mx8Banksx16) DDR3 SDRAM, H2A402G1666P

Whether you are planning to change the DDR3 SDRAM in your home, or just change some DDR3 SDRAM, if you want the right products at economical prices, buy electrical fixtures online from Axeme - Hwaling Technology Co., Ltd.. Our products are widely in demand among the clients due to their features such as sturdy construction, durability, rust resistance and a longer service life. With the help of our professionals, we offer these products in various sizes as per the varied requirements of our valuable clients. In addition, our company specializes in manufacturing professional DDR3 SDRAM.

H2A402G1666P

2Gb (16Mx8Banksx16) DDR3 SDRAM

The H2A402G1666P is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
  1. posted CAS with additive latency
  2. write latency = read latency -1
  3. On Die Termination
  4. programmable driver strength data
  5. seamless BL4 access with bank-grouping

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Features :

  • JEDEC Standard VDD/VDDQ = 1.5V±0.075V
  • All inputs and outputs are compatible with SSTL_15 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS by programmable additive latency
  • Bust length: 4 with Burst Chop (BC) and 8.
  • CAS Write Latency (CWL): 5, 6, 7, 8
  • CAS Latency (CL): 6, 7, 8, 9, 10, 11,13
  • Write Latency (WL) =Read Latency (RL) -1.
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available both for 8 & 4 with BC.
  • Multi Purpose Register (MPR) for pre-defined pattern read out
  • On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8us Tcase < 85°C
    Refresh Interval: 3.9us Tcase between 85°C ~ 95°C
  • RoHS Compliance

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Axeme - Hwaling Technology Co., Ltd. is one of the world's leading premium brands for DDR3 SDRAM. The family business, which was founded in 1998 and is headquartered in Taiwan, stands for innovation, tradition and exceptional style. Axeme - Hwaling Technology Co., Ltd. is a well-reputed organization dealing with the manufacturing and supplying of DDR3 SDRAM and other relative accessories. Moreover, we have always been committed to reaching new heights in innovation, leadership and customer satisfaction.