2Gb (16Mx8Banksx16) DDR3 SDRAM, H2A402G1666P
H2A402G1666P
2Gb (16Mx8Banksx16) DDR3 SDRAM
This synchronous device achieves high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
- posted CAS with additive latency
- write latency = read latency -1
- On Die Termination
- programmable driver strength data
- seamless BL4 access with bank-grouping
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion.
The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 2Gb DDR3 devices operates with a single power supply: 1.5V±0.075V VDD and VDDQ.
Refresh Interval: 3.9us Tcase between 85°C ~ 95°C