Toggle menu

Axeme - Hwaling Technology Co., Ltd.

DDR2 SDRAM Supplier in Taiwan

With our quality standardized and customized products like our {DRAM IC, DDR2 SDRAM, we have earned a huge client base, spread all across the globe.For nearly 10 years it has been our passion and our mission to create products that make people’s lives better, easier and more fulfilling. Our clientele includes few of the top-notch names in their own field of work. Axeme - Hwaling Technology Co., Ltd. takes pride in helping customers with their inquiries, whether related to pre- or after-sales product advice, ordering, financial, technical support, or just a bit of guidance!
Categories > DRAM IC > DDR2 SDRAM

H2A302G1656C

2Gb (16Mx8Banks16) DDR2 SDRAM

I'm interested
The H2A302G1656C is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 2G bits which organized as 16Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DDR2-1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features:
  1. posted CAS with additive latency
  2. write latency = read latency -1
  3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
  4. normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks.
Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style.
Features :

  • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
  • All inputs and outputs are compatible with SSTL_18 interface.
  • Fullydifferential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS
  • Bust length: 4 and 8.
  • Programmable CAS Latency (CL): 3, 4, 5, 6, 7
  • Write Latency (WL) =Read Latency (RL) -1.
  • Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
  • Bi-directional DifferentialData Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available.
  • Off-Chip Driver (OCD) Impedance Adjustment
  • On Die Termination (ODT)
  • Auto Refresh and Self Refresh
  • RoHS Compliance
  • Partial Array Self-Refresh (PASR)
  • High Temperature Self-Refresh rate enable

Send Message
Contact Information
Verification Code Change Image

By submitting your contact information, you acknowledge that you consent to our processing data in accordance with the Privacy and Cookie Policy.

Axeme - Hwaling Technology Co., Ltd.’s professional knowledge and advanced equipment enables us to achieve low cost, efficiency and quality control, which in turn result in superior products and competitive pricing. Our company offers high quality DRAM IC, DDR2 SDRAM with reasonable price. We wish to create win-win relationships throughout the supply chain. It is our pleasure to service your DRAM IC, DDR2 SDRAM needs.