Axeme - Hwaling Technology Co., Ltd.

Hwaling Technology is based in Taipei, Taiwan. As the interaction of Communication, Electronic Consumer and Computing gadgets has became the main stream in consumer lives. Hwaling practices his specialty with long-term experience in this memory field to drive quality products and services to customers.

DDR2 SDRAM Supplier in Taiwan

Our high-tech manufacturing unit supported by our modern in-house designing unit and experienced industry professionals enable us to manufacture precision engineered and high-class equipment. We are one of the leading suppliers and exporters of optimum quality DRAM IC, DDR2 SDRAM. Owing to their steady performance, impeccable design and minimum maintenance, these testing machines are highly demanded in the market. Each and every member of our team is committed to the number one goal of filling our customers' needs.


512Mb (8Mx4Banks×16) DDR2 SDRAM

The H2A35121656I is a four bank DDR DRAM organized as 4 banks x 16Mbit x 8 . The H2A35121656I achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
The chip is designed to comply with the following key DDR2 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. On Die Termination.

All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O s are synchronized with a pair of bidirectional strobes (DQS, DQS) in a source synchronous fashion.
Operating the four memory banks in an interleaved fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.
Features :

  • High speed data transfer rates with system frequency up to 533MHz
  • Posted CAS
  • Programmable /CAS Latency: 3, 4, 5, 6 and 7
  • Programmable Additive Latency:0, 1, 2, 3, 4, 5 and 6
  • Write Latency = Read Latency -1
  • Programmable Wrap Sequence: Sequential or Interleave
  • Programmable Burst Length: 4 and 8 Automatic and Controlled Precharge Command
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 7.8 us at lower than Tcase 85oC, 3.9 us at 85oC < Tcase ≤ 95oC
  • ODT (On-Die Termination)
  • Weak Strength Data-Output Driver Option
  • Bidirectional differential Data Strobe (Single-ended data-strobe is an optional feature)
  • On-Chip DLL aligns DQ and DQs transitions with CK transitions
  • Differential clock inputs CK and /CK
  • JEDEC Power Supply 1.8V ± 0.1V
  • All inputs & outputs are compatible with SSTL_18 interface
  • tRAS lockout supported
  • Internal four bank operations with single pulsed RAS

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