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DDR2 SDRAM Supplier from Taiwan
Axeme - Hwaling Technology Co., Ltd.’s DDR2 SDRAM is currently one of the most advanced DDR2 SDRAM available on the world market and will provide the best product ratio between quality-price. We not only provide a positive contribution to a sustainable development but also preserve a clean earth for the next generation. Please call or email us if you have any questions concerning compact DDR2 SDRAM.
H2A301G1656B
1Gb (8Mx8Banksx16) DDR2 SDRAM
The H2A301G1656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 8Mbits x 8 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-1066) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features:
The chip is designed to comply with the following key DDR2 SDRAM features:
- posted CAS with additive latency,
- write latency = read latency -1,
- Off-Chip Driver (OCD) impedance adjustment and On Die Termination
- normal and weak strength data output driver.
Features :
- JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
- All inputs and outputs are compatible with SSTL_18 interface.
- Fully differential clock inputs (CK, /CK) operation.
- Eight Banks
- Posted CAS
- Bust length: 4 and 8.
- Programmable CAS Latency (CL): 5,6 and 7
- Programmable Additive Latency (AL): 0, 1, 2, 3, 4, 5 & 6.
- Write Latency (WL) =Read Latency (RL) -1.
- Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
- Bi-directional Differential Data Strobe (DQS).
- Data inputs on DQS centers when write.
- Data outputs on DQS, /DQS edges when read.
- On chip DLL align DQ, DQS and /DQS transition with CK transition.
- DM mask write data-in at the both rising and falling edges of the data strobe.
- Sequential & Interleaved Burst type available.
- Off-Chip Driver (OCD) Impedance Adjustment
- On Die Termination (ODT)
- Auto Refresh and Self Refresh
- 8,192 Refresh Cycles / 64ms
- Average Refresh Period 7.8us at lower than Tcase 85 °C, 3.9us at 85°C < Tcase ≦ 95°C
- RoHS Compliance
- Partial Array Self-Refresh (PASR)
- High Temperature Self-Refresh rate enable
With our well equipped low-cost operation in Taiwan, Axeme - Hwaling Technology Co., Ltd. as a group is well positioned in the competitive market of DDR2 SDRAM design and manufacturing. Axeme - Hwaling Technology Co., Ltd. has earned an impressive reputation for providing outstanding service and developing efficient, comprehensive global supply chain solutions. If you want to make a suggestion or place a feedback about our staff, service or website, please phone or email to us, we will reply you as soon as possible.