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Axeme - Hwaling Technology Co., Ltd.

DDR2 SDRAM Manufacturer in Taiwan

Axeme - Hwaling Technology Co., Ltd. is an acknowledged leader in the manufacture of DDR2 SDRAM, with distribution across the globe. We guarantee the quality of our products, since we deal only with authorized and reliable DDR2 SDRAM manufactures. The parts you buy from us will fit your needs perfectly. We have a team of quality analysts who are highly qualified and experienced. They check the quality of these products on various parameters to ensure their utility in various sectors.
Categories > DRAM IC > DDR2 SDRAM

H2A35121656B

512Mb (8Mx4Banks×16) DDR2 SDRAM

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The H2A35121656B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DDR2-1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
  4. normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 512 Mb DDR2 devices operate with a single power supply: 1.8V ± 0.1V VDD and VDDQ.
Available package:TFBGA-84Ball.
Features :

  • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
  • All inputs and outputs are compatible with SSTL_18 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Four Banks
  • Posted CAS
  • Bust length: 4 and 8.  Programmable CAS Latency (CL): 3, 4, 5, 6 & 7.
  • Programmable Additive Latency (AL):0, 1, 2, 3, 4, 5 & 6.
  • Write Latency (WL) =Read Latency (RL) -1.
  • Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available.
  • Off-Chip Driver (OCD) Impedance Adjustment
  • On Die Termination (ODT)
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • Average Refresh Period 7.8us at lower than Tcase 85 °C, 3.9us at 85°C < Tcase ≦ 95°C
  • RoHS Compliance
  • Partial Array Self-Refresh (PASR)
  • High Temperature Self-Refresh rate enable

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Axeme - Hwaling Technology Co., Ltd. is a leading manufacturer and exporter in Taiwan since 1998, specialized in wide range of DDR2 SDRAM. Our products enjoy well-reputation by the strict quality request. Customers will be able to check progress and see when they can order by checking their details on the website. We look forward to building on the progress of the roll-out to date and bringing fast DDR2 SDRAM to as many people as possible, as quickly as possible.