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Axeme - Hwaling Technology Co., Ltd.

DDR2 SDRAM Manufacturer

Axeme - Hwaling Technology Co., Ltd. ensures all of our DRAM IC, DDR2 SDRAM are affordable and priced competitively with other similar products on the market. We promise that our service is second to none! Every person who purchases a product from Axeme - Hwaling Technology Co., Ltd. will have access to our service department when it is needed. In addition, we specialize in servicing the DRAM IC, DDR2 SDRAM needs of businesses locally and across the country. Our quality controllers perform variety of quality processes in the entire production process in order to ascertain that only high quality products are delivered at clients’ end.
Categories > DRAM IC > DDR2 SDRAM

H2A301G0856B

1Gb (16Mx8Banks×8) DDR2 SDRAM

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The H2A301G0856B is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1G bits which organized as 16Mbits x 8 banks by 8 bits.
This synchronous device achieves high speed double-data-rate transfer rates of up to 1066 Mb/sec/pin (DDR2-1066) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features:
  1. posted CAS with additive latency,
  2. write latency = read latency -1,
  3. Off-Chip Driver (OCD) impedance adjustment and On Die Termination
  4. normal and weak strength data output driver.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR2 devices operate with a single power supply: 1.8V ± 0.1V VDD and VDDQ.
Available package: TFBGA-60Ball.
Features :

  • JEDEC Standard VDD/VDDQ = 1.8V±0.1V.
  • All inputs and outputs are compatible with SSTL_18 interface.
  • Fully differential clock inputs (CK, /CK) operation.
  • Eight Banks
  • Posted CAS
  • Bust length: 4 and 8.
  • Programmable CAS Latency (CL): 5, 6
  • Programmable Additive Latency (AL):0, 1, 2, 3, 4, 5
  • Write Latency (WL) =Read Latency (RL) -1.
  • Read Latency (RL) = Programmable Additive Latency (AL) + CAS Latency (CL)
  • Bi-directional Differential Data Strobe (DQS).
  • Data inputs on DQS centers when write.
  • Data outputs on DQS, /DQS edges when read.
  • On chip DLL align DQ, DQS and /DQS transition with CK transition.
  • DM mask write data-in at the both rising and falling edges of the data strobe.
  • Sequential & Interleaved Burst type available.
  • Off-Chip Driver (OCD) Impedance Adjustment
  • On Die Termination (ODT)
  • Auto Refresh and Self Refresh
  • 8,192 Refresh Cycles / 64ms
  • RoHS Compliance
  • Partial Array Self-Refresh (PASR)
  • High Temperature Self-Refresh rate enable

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Because DRAM IC, DDR2 SDRAM are configurable, design has to be at the heart of any supplier who hopes to exactly meet their customers’ requirements. Axeme - Hwaling Technology Co., Ltd. has already gained good reputations among customers for a wide variety of innovative products as well as a full range of exceptional services due to its top quality of design, professionalism and reliability. We wish to create win-win relationships throughout the supply chain. It is our pleasure to service your DRAM IC, DDR2 SDRAM needs.